
ZXMC10A816N8
Typical Characteristics Q1 N-Channel (cont.)
700
10
600
500
400
300
200
100
C ISS
C OSS
C RSS
V GS = 0V
f = 1MHz
8
6
4
2
I D = 1.6A
V DS = 50V
0
0.1
1
10
100
0
0
2
4
6
8
10
V DS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
Q G
12V
50k
Same as
D.U.T
V G
Q GS
Q GD
Charge
I G
V GS
D.U.T
V DS
I D
V DS
Basic gate charge waveform
Gate charge test circuit
90%
10%
V GS
R G
V GS
R D
V DS
V DD
t d(on)
t (on)
t r
t d(off)
t (on)
t r
Switching time waveforms
Switching time test circuit
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
6 of 11
www.diodes.com
March 2013
? Diodes Incorporated